Preparation and properties of sputtered bismuth oxide films

P. B. Clapham

Apparatus is described which is capable of producing thin films of bismuth oxide with refractive index 2.50 and index of absorption 0.03 (both measured at a wavelength of 5500 Å). The results described show the necessity for close control of the argon: oxygen ratio in the sputtering discharge, and a simple flowmeter is described that can provide such control.

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Materials
Curve 1
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0° ~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0440 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:1; sputtering time 2.5 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 2
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0° ~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0525 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:1; sputtering time 3 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 3
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0° ~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0610 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:1; sputtering time 3.5 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 4
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0° ~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0700 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:1; sputtering time 4 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 5
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0° ~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0525 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:2; sputtering time 3 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 6
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0° ~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0525 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:7; sputtering time 3 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 1
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0°~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0440 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:1; sputtering time 2.5 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 2
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0°~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0525 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:1; sputtering time 3 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 3
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0°~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0610 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:1; sputtering time 3.5 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 4
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0°~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0700 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:1; sputtering time 4 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 5
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0°~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0525 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:2; sputtering time 3 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.
Curve 6
Temperature, K: 298 Wavelength Range, µm: 0.4750-0.6750 Geometry θ θ' ω': ~0°~0° Composition (weight percent), Specifications, and Remarks: Bismuth oxide coating (~0.0525 µm thick); glass substrate; produced by sputtering bismuth in argon + oxygen atm onto glass substrate; argon:oxygen flow rate 100:7; sputtering time 3 min; substrate to sputtering source distance 9 mm; data includes effect of back-surface reflections.