Optical Constants of Silicon in the Extreme Ultraviolet Region
T. Sasaki, K. Ishiguro
The optical constants n and k of a single crystal of silicon were determined by measurements of the reflectance at two angles of incidence in the region 10 to 19.2 eV. Energies of plasma oscillation derived from the optical data agree with the values from the electronic energy loss experiments, being about 17 and 11 eV for the normal (or bulk) plasmon and the tangential (or surface) plasmon, respectively. © 1962 The American Physical Society.
Materials
Curve 1
Temperature K: 298
Wavelength Range, λ: 0.064-0.120
Geometry θ θ' ω': 20° 20°
Reported Error, %: <10
Composition (weight percent), Specifications and Remarks: n-type single crystal cut along the (111) plane; polished mechanically; soaked with HF for 90 sec, rinsed several times with acetone; mounted immediately after rinsing, evacuated.
Curve 2
Temperature K: 298
Wavelength Range, λ: 0.064-0.120
Geometry θ θ' ω': 70° 70°
Reported Error, %: <5
Composition (weight percent), Specifications and Remarks: Above specimen and conditions.