Infrared lattice reflection spectra of III-V compound semiconductors

M. Hass, B. W. Henvis

The fundamental lattice reflection band of InSb, InAs, GaSb and GaAs has been measured at liquid helium temperature with a grating spectrometer. By comparing the observed spectrum with that calculated using a single classical dispersion oscillator, the following values of the transverse (v̄0) and longitudinal (v̄l) optical frequencies for long wavelength vibrations and Szigeti effective ionic charge (e*8/e) are obtained: InSb, v̄0 = 184.7 ± 3 cm-1, v̄l = 197.2 ± 2, e8* e = 0.42; InAs, v̄0 = 218.9 ± 3 cm-1, v̄l = 243.3 ± 2, e8* e = 0.56; GaSb, v̄0 = 230.5 ± 3 cm-1, v̄l = 240.3 ± 2, e8* e = 0.33; GaAs, v̄0 = 273.3 ± 3 cm-1, v̄l = 297.3 ± 2, e8* e = 0.51; InP,v̄0 = 307 ± 8 cm-1,v̄l = 351 ± 5, e8* e = 0.68; AlSb, v̄0 = 318 ± 8 cm-1, v̄l = 345 ± 5, e8* e = 0.53 The values for InP and AlSb were obtained by a reanalysis of earlier room temperature data. An empirical dependence of e8* e on the difference between the atomic polarizabilities of the group III and group V atoms has been observed. © 1962.

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Materials
Curve 1
Temperature, K: ~4.2 Wavelength Range, µm: 39.2-47.6 Geometry θ θ': 10° 10° Composition (weight percent), Specifications and Remarks: Crystal, polished to mirror finish; data extracted from smooth curve.
Curve 1
Temperature K: ~4.2 Wavelength Range, µm: 38.3-48.5 Geometry θ θ' ω: 10° 10° Composition (weight percent), Specifications and Remarks: Crystal; polished to mirror finish; data extracted from smooth curve.
Curve 1
Temperature K: ~298 Wavelength Range, μm: 22.2-42.9 Geometry θ' θ'': 10° 10° Composition (weight percent), Specifications, and Remarks: Crystal; polished to mirror-finish; data extracted from smooth curve.
Curve 1
Temperature K: ~298 Wavelength Range, µm: 22.2-44.1 Geometry θ θ' w': 10° 10° Composition (weight percent), Specifications and Remarks: AlSb; crystal; polished to mirror finish; data extracted from smooth curve.