Optical properties of zinc telluride in the infrared

Shin Ichiro Narita, Hiroyuki Harada, Keigo Nagasaka


ZnTe crystals were grown in a high pressure Tammann Furnace and doped with various kinds of impurities up to a carrier concentration of 8×10 18 cm -3 . The transmission and reflection spectra of undoped ZnTe crystals were measured in the region 100∼500 cm -1 . From the reflection spectrum the frequency values of TO (=179 cm -1 ) and LO (=206 cm -1 ) at the zone center and the effective charge of 0.62 e were determined. Absorption maxima in the transmission spectra could be assigned with the assumption that TO=175 cm -1 , LO=157 cm -1 , TA=73 cm -1 , and LA=126 cm -1 at the zone boundaries. The reliability of these values was checked by comparison with the data of other II-VI compounds and by the Brout sum rule. The reflection from heavily doped ZnTe crystals was interpretated in terms of the interaction of plasmons with optical phonons. The effective mass of the heavy holes was determined from this analysis to be (1.5±0.1) m 0 .

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Materials
Curve 1
Temperature K: ~298 Wavelength Range, µm: 50.8-102 Geometry θ θ' ω: ~0°~0° Composition (weight percent), Specifications, and Remarks: Polished single crystal.
Curve 2
Temperature K: ~298 Wavelength Range, µm: 50.8-102 Geometry θ θ' ω: ~0°~0° Composition (weight percent), Specifications, and Remarks: Polished single crystal.
Curve 3
Temperature K: ~298 Wavelength Range, µm: 59.8-100 Geometry θ θ' ω: ~0°~0° Composition (weight percent), Specifications, and Remarks: Pressed plate; polycrystalline.
Curve 4
Temperature K: ~298 Wavelength Range, µm: 70.2-106 Geometry θ θ' ω: ~0°~0° Composition (weight percent), Specifications, and Remarks: Roughly polished single crystal.
Curve 5
Temperature K: ~298 Wavelength Range, µm: 66.6-107 Geometry θ θ' ω: ~0°~0° Composition (weight percent), Specifications, and Remarks: Roughly polished single crystal.
Curve 1
Temperature K: 300 Wavelength Range, μm: 37.9-64.9 Geometry θ' θ'': ~15°-15° Composition (weight percent), Specifications, and Remarks: Single crystal; grown by Bridgman-Stockbarger method at up to 1573 K and at 50 to 60 atm of argon; carrier concentration 2 to 10¹⁵ cm⁻³, data extracted from smooth curve.
Curve 2
Temperature K: 300 Wavelength Range, μm: 19.7-64.7 Geometry θ' θ'': ~15°-15° Composition (weight percent), Specifications, and Remarks: p-type single crystal; p-type carrier concentration 2 to 10¹⁵ cm⁻³, grown by Bridgman-Stockbarger method at <1573 K and 50 to 60 atm of argon; data extracted from smooth curve.
Curve 1
Temperature K: 300 Wavelength Range, μm: 20.0-25.0 Geometry θ' θ'': ~0°-0° Composition (weight percent), Specifications, and Remarks: Single crystal (1.185 mm thick); grown by Bridgman-Stockbarger method at up to 1573 K and at 50 to 60 atm of argon; data extracted from smooth curve.
Curve 2
Temperature K: 300 Wavelength Range, μm: 24.9-39.7 Geometry θ' θ'': ~0°-0° Composition (weight percent), Specifications, and Remarks: Similar to the above specimen and conditions except 340 μm thick.
Curve 3
Temperature K: 300 Wavelength Range, μm: 30.2-39.8 Geometry θ' θ'': ~0°-0° Composition (weight percent), Specifications, and Remarks: Similar to the above specimen and conditions except 200 μm thick.