Measurement and analysis of the infrared reflection spectrum of semiconducting SnS
C. Haas, M. M.g. Corbey
The infrared reflection spectrum of p-type SnS single crystals was measured between 2 and 25μ. The observed dispersion was ascribed to the combined effects of lattice vibrations and free holes. An analysis gave for the index of refraction n0 = 3.6 ± 0.1, the dielectric constant ϵ = 19.5 ± 2, and the effective charge on the atoms e∗ = 0.7e0. The effective mass of holes is isotropic in the plane perpendicular to the c-axis, with m⊥∗ = 0.20m0 and the effective mass parallel to the c-axis is much larger: m∗ ≅ m0.
Materials
Curve 1
Temperature K: 80
Wavelength Range, μm: 2.00-23.8
Geometry θ' θ'': ~0°-0°
Composition (weight percent), Specifications, and Remarks: TIN SULFIDE, SnS; Ag-doped crystal (hole concentration at 80 K; ρ = 1.06 x 10¹⁸ cm⁻³; specular plate falling on a surface perpendicular to c-axis; data extracted from smooth curve.
Curve 2
Temperature K: 300
Wavelength Range, μm: 2.00-23.6
Geometry θ' θ'': ~0°-0°
Composition (weight percent), Specifications, and Remarks: Above specimen and conditions.