Temperature Dependence of Carrier Concentrations and Conduction-Band Minima Separation of Gallium Antimonide

C. Y. Liang

Based upon the two-band model, a combined analysis of the experimental data of an n-type GaSb sample obtained from Faraday rotation, spectral emittance, and Hall-effect measurements is discussed. It is found that the ratio of the mobilities of the (000) and 〈111〉 conduction bands is 9.0 at 77°K and 5.59 at 273°K. The total carrier concentration of the two bands is found to be the same at these two temperatures. The temperature dependence of the carrier concentration of the (000) and the 〈111〉 bands are found, respectively, as N0(T) = (1.625-2.29×10-3 T) ×1024/M3 and N1(T) = (2.320+2. 29×10-3 T) ×1024/M3. The temperature dependence of the separation of the (000) and 〈111〉 conduction band minima is found to be Δ = (0.084+5.9×10-5 T) eV. © 1968 The American Institute of Physics.

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Materials
Curve 1
Temperature, K: 273 Wavelength Range, µm: 3.1-19.6 Geometry θ θ': ~0° ~0° Composition (weight percent), Specifications and Remarks: Single crystal, n-type, Te doped; polished to mirror finish; calculated from spectral emittance data.
Curve 2
Temperature, K: 77 Wavelength Range, µm: 3.0-20.1 Geometry θ θ': ~0° ~0° Composition (weight percent), Specifications and Remarks: Above specimen and conditions.
Curve 1
Temperature K: ~298 Wavelength Range, µm: 3.12-18.28 Geometry θ θ' ω': 10° 10° Composition (weight percent), Specifications and Remarks: In0.56Ga0.44Sb; bulk slice cut from polycrystalline ingot; thickness 0.5 mm; mechanically polished down to 0.05 µ alumina powder, etched in solution of 1 part HNO₃ + 2 parts HCl, and washed in alcohol.
Curve 2
Temperature K: ~298 Wavelength Range, µm: 11.91-23.2 Geometry θ θ' ω': 10° 10° Composition (weight percent), Specifications and Remarks: In0.225Ga0.775Sb; bulk slice cut from polycrystalline ingot; thickness 0.5 mm; mechanically polished down to 0.05 µ alumina powder, etched in solution of 1 part HNO₃ + 2 parts HCl, and washed in alcohol.