EKHI

Materials

Curve 1

Temperature, K: ~298 Wavelength Range, µm: 0.220-0.320 Geometry θ θ' ω': 20° 20° Composition (weight percent), Specifications, and Remarks: p-type (boron doped) silicon oxidized at 1398 K in dry oxygen; coating thickness ~8531 Å; substrate cut on <111> plane, lapped and chemically polished before oxidation; data extracted from smooth curve. [Authors' designation: Sample 16]

Wavelength / 𝜇m	Reflectance /
0.22	0.546
0.223	0.435
0.225	0.412
0.226	0.43
0.23	0.576
0.233	0.599
0.237	0.554
0.24	0.459
0.241	0.423
0.243	0.406
0.245	0.434
0.249	0.582
0.253	0.634
0.255	0.638
0.258	0.615
0.264	0.486
0.265	0.479
0.268	0.496
0.273	0.617
0.276	0.654
0.279	0.662
0.281	0.652
0.286	0.574
0.29	0.475
0.293	0.437
0.296	0.423
0.299	0.45
0.307	0.548
0.31	0.565
0.314	0.553
0.32	0.477

Curve 2

Temperature, K: ~298 Wavelength Range, µm: 0.220-0.320 Geometry θ θ' ω': 20° 20° Composition (weight percent), Specifications, and Remarks: Similar to above specimen and conditions except film thickness ~11,397 Å. [Authors' designation: Sample 18]

Wavelength / 𝜇m	Reflectance /
0.22	0.508
0.222	0.487
0.224	0.539
0.227	0.637
0.228	0.646
0.23	0.637
0.233	0.541
0.234	0.485
0.235	0.465
0.236	0.465
0.238	0.511
0.24	0.598
0.242	0.634
0.244	0.637
0.246	0.612
0.248	0.539
0.251	0.492
0.253	0.529
0.257	0.638
0.259	0.676
0.261	0.678
0.264	0.628
0.266	0.565
0.268	0.54
0.272	0.566
0.276	0.665
0.279	0.692
0.282	0.669
0.288	0.508
0.289	0.503
0.293	0.52
0.299	0.606
0.301	0.614
0.305	0.585
0.314	0.416
0.315	0.409
0.318	0.42
0.32	0.457

Erratum: Phase-shift-corrected thickness determination of silicon dioxide on silicon by ultraviolet interference (Journal of Applied Physics (1967) 38 (2455))